1 - 2 ? 2000 ixys all rights reserved g = gate, c = collector, e = emitter, tab = collector symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c40a i c90 t c = 90 c28a i cm t c = 25 c, 1 ms 80 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 i cm = 56 a (rbsoa) clamped inductive load, l = 100 h @ 0.8 v ces p c t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (m3) to-247 1.13/10 nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight to-247 6 g to-268 4 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 750 a, v ge = 0 v 600 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.5 v i ces v ce = 0.8 ? v ces t j = 25 c 100 a v ge = 0 v t j = 125 c 500 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 2.0 v ultra-low v ce(sat) v ces = 600 v igbt with diode i c25 = 40 a v ce(sat) = 2.0 v features international standard packages low v ce(sat) - for minimum on-state conduction losses high current handling capability mos gate turn-on - drive simplicity fast recovery epitaxial diode (fred) - soft recovery with low i rm applications ac motor speed control dc servo and robot drives dc choppers uninterruptible power supplies (ups) switch-mode and resonant-mode power supplies advantages easy to mount with 1 screw (isolated mounting screw hole) low losses, high efficiency high power density 98570a (7/00) ixgh 28n60b ixgt 28n60b preliminary data to-247 ad (ixgh) to-268 (ixgt) ixys reserves the right to change limits, test conditions, and dimensions. g c (tab) e g c e tab
2 - 2 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 9 14 s pulse test, t 300 s, duty cycle 2 % c ies 1500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 130 pf c res 40 pf q g 80 100 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 15 30 nc q gc 30 40 nc t d(on) 15 ns t ri 25 ns t d(off) 200 400 ns t fi 200 400 ns e off 36mj t d(on) 15 ns t ri 25 ns e on 0.2 mj t d(off) 400 ns t fi 400 ns e off 6mj r thjc 0.83 k/w r thck to-247 0.25 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 100 h, v ce = 0.8 v ces , r g = r off = 10 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 100 h v ce = 0.8 v ces , r g = r off = 10 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g ixgh 28n60b ixgt 28n60b to-247 ad (ixgh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 to-268aa (d 3 pak) dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 min. recommended footprint ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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